GaAs1-x Bi x growth on Ge: anti-phase domains, ordering, and exciton localization
Abstract The dilute bismide alloy GaAs1-x Bi x Pickleball Set has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications.To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge substrates is comprehensively inve